Method for forming in-situ implanted semiconductor barrier layer

Details Method for forming in-situ implanted semiconductor barrier layer Method for forming in-situ implanted semiconductor barrier layer

1998-11-23

2000-11-14

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438643, 438648, 438654, 438656, 438660, 438685, H01L 214763

Patent

active

061469939

ABSTRACT:
A method is provided for forming barrier layers in channel or via openings of semiconductors by using in-situ nitriding of barrier metals (Ta, Ti, or W) after they have been deposited in channel and via openings which will allow better control of the barrier metal/barrier material (Ta/TaN, Ti/TiN, or W/WN) composition, eliminate particle problems, and avoiding target poisoning.

REFERENCES:
patent: 5780356 (1998-07-01), Kim
patent: 5801097 (1998-09-01), Chang
patent: 5827777 (1998-10-01), Schinella et al.

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