Method of manufacturing buried contact in SRAM

Details Method of manufacturing buried contact in SRAM Method of manufacturing buried contact in SRAM

1998-10-30

2000-11-14

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438523, 438533, 438586, 438637, 438700, H01L 21425

Patent

active

061469815

ABSTRACT:
A method of manufacturing a buried contact in an SRAM includes retaining a portion of the gate oxide layer adjacent to the source/drain region when a buried contact opening is formed. The retained gate oxide layer protects the substrate by acting as a buffer region, thus preventing the over-etching of substrate, which would form a deep trench. Consequently, contact resistance between the buried contact and the source/drain region is lowered, and leakage current at the junction is prevented.

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patent: 6022794 (2000-02-01), Hsu
patent: 6071798 (2000-06-01), Yaung et al.

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