Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

1999-01-22

2000-11-14

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438264, H01L 218247

Patent

active

061469459

ABSTRACT:
The object is to provide a method for manufacturing a semiconductor device that is high in accuracy and function at low cost. In a semiconductor device having a resistance body and a non-volatile memory, by a manufacturing method to form a non-volatile memory select gate and floating gate with first polysilicon comparatively thick in film thickness and to form a non-volatile memory control gate and a resistance body with second polysilicon comparatively thin in film thickness, it is charactrized in that a non-volatile memory small in cell size and a highly accurate and stable resistance body can be simultaneously provided.

REFERENCES:
patent: 5970338 (1999-10-01), Tempel
patent: 5981342 (1999-11-01), Kakoschke et al.

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