Method of making corner protected shallow trench field effect tr

Details Method of making corner protected shallow trench field effect tr Method of making corner protected shallow trench field effect tr

1996-02-21

1998-04-21

Fourson, George R.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

H01L 2176

Patent

active

057417385

ABSTRACT:
A semiconductor structure to prevent gate wrap-around and corner parasitic leakage comprising a semiconductor substrate having a planar surface. A trench is located in the substrate, the trench having a sidewall. An intersection of the trench and the surface forms a corner. A dielectric lines the sidewall of the trench. And, a corner dielectric co-aligned with the corner extends a subminimum dimension distance over the substrate from the corner.

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