Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond
Patent
1999-05-06
2000-10-31
Clark, Sheila V.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Ball or nail head type contact, lead, or bond
257786, H01L 2348, H01L 2552, H01L 2940
Patent
active
061407097
ABSTRACT:
A bonding pad structure, in particular for a micromechanical sensor, includes a substrate, an electrically insulating sacrificial layer provided on the substrate, a patterned conductor path layer buried in the sacrificial layer, a contact hole provided in the sacrificial layer, and a bonding pad base, composed of an electrically conductive material. The bonding pad base has a first region extending over the sacrificial layer, and a second layer in contact with the conductor path region and extending through the contact hole. A protective layer is provided at least temporarily on the sacrificial layer in a specific region beneath and around the bonding pad base to prevent underetching of the sacrificial layer beneath the bonding pad base during etching of the sacrificial layer in such a way that the substrate and/or the conductor path is exposed.
REFERENCES:
patent: 5814893 (1998-09-01), Hsu et al.
patent: 5838054 (1998-11-01), Kwasnick et al.
patent: 5925931 (1999-07-01), Yamamoto
patent: 6066877 (2000-05-01), Williams et al.
Bischof Udo
Graf Eckhard
Lutz Markus
Muenzel Horst
Offenberg Michael
Clark Sheila V.
Robert & Bosch GmbH
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