Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

1998-12-21

2000-10-31

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438286, 438304, 438305, H01L 21336

Patent

active

061401838

ABSTRACT:
A method of fabricating a semiconductor device an object of which is to form a semiconductor device having a DMOS with high withstanding pressure and high driving capacity and a highly precise polycrystalline silicon resistor. In the method of fabricating a semiconductor device, by patterning a second polycrystalline silicon resistor using anisotropic etching, the size precision is improved. Further, during the patterning, side spacers are formed on gate electrode side walls formed of first polycrystalline silicon at the same time. The body of the DMOS is doped with the gate electrode and the spacers being the mask. A source region is doped with the gate electrode being the mask after the spacers are removed.

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patent: 5970329 (1999-10-01), Cha

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