Method of fabricating storage capacitor for dynamic random-acces

Details Method of fabricating storage capacitor for dynamic random-acces Method of fabricating storage capacitor for dynamic random-acces

1998-04-03

2000-10-31

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438398, 257309, H01L 218242

Patent

active

061401803

ABSTRACT:
A method of fabricating the storage capacitor for the memory cell units of DRAM IC devices is disclosed. The method is not constrained by the resolution limitations commonly seen in traditional photolithography. Self-aligned anisotropic procedure can be employed to form contact opening having reduced dimension. The smaller via formed in the opening can effectively prevent the situation in which the via is short-circuited with other components of the cell unit. Device fabrication yield rate can thus be improved.

REFERENCES:
patent: 5773342 (1998-06-01), Fukase
patent: 5872041 (1999-02-01), Lee et al.
patent: 5902124 (1999-05-01), Hong
patent: 5930641 (1999-07-01), Pan

Affiliated with

Also associated with

Rating

Method of fabricating storage capacitor for dynamic random-acces does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating storage capacitor for dynamic random-acces, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating storage capacitor for dynamic random-acces will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2050640