Method of large angle tilt implant of channel region

Details Method of large angle tilt implant of channel region Method of large angle tilt implant of channel region

1995-10-23

1998-12-22

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438290, 438291, 438301, 438302, H01L 21336

Patent

active

058518860

ABSTRACT:
A channel region formation process in field effect transistors directed toward reducing threshold voltage sensitivity to variations in gate length resulting from manufacturing techniques. A polysilicon gate is formed over the substrate and a channel region is subsequently implanted at a large angle measured from perpendicular to the substrate. Large angle implantation results in a non-uniform doping concentration in the channel region, improving threshold voltage sensitivity. Improvement can also be seen in other parameters, including source-drain current, substrate current, leakage current, magnification factor, and hot electron channel injection efficiency.

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