Structure and manufacturing method for ROM

Details Structure and manufacturing method for ROM Structure and manufacturing method for ROM

1997-05-16

1998-12-22

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438282, H01L 218234

Patent

active

058518843

ABSTRACT:
A structure and manufacturing method for ROM suitable for high density component fabrication, mainly consisting of conducting diode memory cells having a forward bias voltage of about 0.4V located above a silicon substrate, and of non-conducting memory cells having only the bit lines embedded in the substrate, forming a memory unit for the storage and retrieval of data bits at the junction crossing between each word line and each bit line. When a suitable operating voltage is applied to a word line, a change of current flow detected in the selected bit line represents either the ON or OFF state of a memory unit and hence reflects the coded data bit.

REFERENCES:
patent: 5510287 (1996-04-01), Chen et al.
patent: 5615946 (1997-04-01), Hsu et al.
patent: 5627091 (1997-05-01), Hong

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