Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects
Patent
1998-04-28
2000-07-18
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
257635, 257637, H01L 2358
Patent
active
06091131&
ABSTRACT:
The propagation of a crack from the surface of the dielectric layer of an integrated circuit, through to the underlying circuit elements, is prevented by controlling the interface between the outermost, dielectric layer or layers and the inner layer or layers of the integrated circuit construction. The interface is weakened so that a crack that encounters the interface is caused to propagate in a horizontal manner, along the interface, preventing propagation of the crack in a direction that would be harmful to the manufactured article. This is preferably accomplished with multiple layers of material, each of which is made capable of redirecting (deflecting) the crack. Deflection of the crack, and arrest of the deflected crack along the interface, is made possible by controlling the fracture resistance of the interface.
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U.S. Patent Application Serial No. 07/998,163, by E. J. White, entitled Process for Producing Cracks on Semiconductor Devices and Devices Containing the Crackstops, Filed.
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Journal of Materials Science by M. D. Thouless entitled Delamination from Surface Cracks in Composite Materials, vol. 24 (1989) pp. 1406-1412.
Cook Robert F.
Garcia Eduardo
Greco Nancy A.
Greco Stephen E.
Levine Ernest N.
Anderson Jay H.
International Business Machines - Corporation
Thomas Tom
Vu Hung Kim
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