Preconditioning process for treating deposition chamber prior to

Details Preconditioning process for treating deposition chamber prior to Preconditioning process for treating deposition chamber prior to

1998-08-26

2000-07-18

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438683, 438906, 4272552, H01L 2144

Patent

active

060907061

ABSTRACT:
A process is disclosed for preconditioning surfaces of a tungsten silicide deposition chamber, after a previous step of cleaning the chamber, and prior to depositing tungsten silicide on active substrates in the chamber, which first comprises treating the chamber surfaces with a gaseous silicon source, such as silane, and a tungsten-bearing gas, such as WF.sub.6, to form a first deposition of a silane-based tungsten silicide on the chamber surfaces. In a preferred embodiment, the preconditioning process further comprises subsequently treating the already coated chamber surfaces in a second step with a mixture of a tungsten-bearing gas, such as WF.sub.6, and a chlorine-substituted silane such as dichlorosilane (SiH.sub.2 Cl.sub.2), monochlorosilane (SiH.sub.3 Cl), or trichlorosilane (SiHCl.sub.3) to form a chlorine-substituted silane-based tungsten silicide deposition over the previous deposited tungsten silicide, prior to commencement of depositing tungsten silicide on active substrates in the deposition chamber.

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