Method of manufacturing capacitor having ferroelectric film for

Details Method of manufacturing capacitor having ferroelectric film for Method of manufacturing capacitor having ferroelectric film for

1997-05-21

2000-07-18

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438 3, H01L 218242

Patent

active

06090657&

ABSTRACT:
A capacitor in a ferroelectric nonvolatile memory (FERAM) comprising a lower electrode formed on a semiconductor substrate; a ferroelectric thin film formed on the lower electrode; an upper electrode formed on the ferroelectric thin film; a first protective layer consisting of one or more layers formed between the semiconductor substrate and the lower electrode, and composed of a material selected from those of Group IVa transition metal, Group Va transition metal, Group IVa transition metal nitride, Group Va transition metal nitride, silicon nitride, nickel and palladium; and a second protective layer consisting of one or more layers formed on the upper electrode, and composed of a material selected from those of Group IVa transition metal, Group Va transition metal, Group IVa transition metal nitride, Group Va transition metal nitride, nickel and palladium. Since the ferroelectric capacitor is enclosed with composite films of such materials, it becomes possible to prevent diffusion of hydrogen and intrusion of water content therein to consequently avert deterioration of the characteristics.

REFERENCES:
patent: 5046043 (1991-09-01), Miller et al.
patent: 5216572 (1993-06-01), Larson et al.
patent: 5475248 (1995-12-01), Takenaka
patent: 5554559 (1996-09-01), Wolters et al.
patent: 5580814 (1996-12-01), Larson

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