Method for producing semiconductor device

Details Method for producing semiconductor device Method for producing semiconductor device

1997-10-02

2000-07-18

Nelms, David

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438162, 438166, H01L 2100, H01L 2184

Patent

active

060906464

ABSTRACT:
A silicon film provided on a blocking film 102 on a substrate 101 is made amorphous by doping Si+, and in a heat-annealing process, crystallization is started in parallel to a substrate from an area 100 where nickel serving as a crystallization-promoting catalyst is introduced.

REFERENCES:
patent: 4309224 (1982-01-01), Shibata
patent: 4406709 (1983-09-01), Celler et al.
patent: 4466179 (1984-08-01), Kasten
patent: 4772564 (1988-09-01), Barnett et al.
patent: 5010033 (1991-04-01), Tokunaga et al.
patent: 5075259 (1991-12-01), Moran
patent: 5147826 (1992-09-01), Liu et al.
patent: 5170244 (1992-12-01), Dohjo et al.
patent: 5177578 (1993-01-01), Kakinoki et al.
patent: 5275851 (1994-01-01), Fonash et al.
patent: 5278093 (1994-01-01), Yonehara
patent: 5318661 (1994-06-01), Kumomi
patent: 5326991 (1994-07-01), Takasu
patent: 5352291 (1994-10-01), Zhang et al.
patent: 5403772 (1995-04-01), Zhang et al.
patent: 5424244 (1995-06-01), Zhang et al.
patent: 5426064 (1995-06-01), Zhang et al.
patent: 5481121 (1996-01-01), Zhang et al.
patent: 5488000 (1996-01-01), Zhang et al.
patent: 5501989 (1996-03-01), Takayama et al.
patent: 5529937 (1996-06-01), Zhang et al.
patent: 5589406 (1996-12-01), Kato et al.
patent: 5637515 (1997-06-01), Takemura
patent: 5824573 (1998-10-01), Zhang et al.
patent: 5897347 (1999-04-01), Yamazaki et al.
C. Hayzelden et al., "In Situ Transmission Electron Microscopy Studies of Silicide-Mediated Crystallization of Amorphous Silicon" (3 pages).
A.V. Dvurechenskii et al., "Transport Phenomena in Amorphous Silicon Doped by Ion Implantation of 3d Metals", Akademikian Lavrentev Prospekt 13, 630090 Novosibirsk 90, USSR, pp. 635-640.
T. Hempel et al., "Needle-Like Crystallization of Ni Doped Amorphous Silicon Thin Films", Solid State Communications, vol. 85, No. 11, pp. 921-924, 1993.
R. Kakkad et al., "Crystallized Si films by low-temperature rapid thermal annealing of amorphous silicon," J. Appl. Phys., 65(5), Mar. 1, 1989, pp. 2096-2072.
G. Liu et al., "Polycrystalline silicon thin film transistors on Corning 7059 glass substrates using short time, low-temperature processing," Appl. Phys. Lett. 62(20), May 17, 1993, pp. 2554-2556.
G. Liu et al., "Selective area crystallization of amorphous silicon films by low-temperature rapid thermal annealing," Appl. Phys. Lett. 55(7), Aug. 14, 1989, pp. 660-662.
R. Kakkad et al., "Low Temperature Selective Crystallization of Amorphous Silicon," Journal of Non-Crystalline Solids, 115, 1989, pp. 66-68.

Affiliated with

Also associated with

Rating

Method for producing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2035714