Focused ion beam etching apparatus

Details Focused ion beam etching apparatus Focused ion beam etching apparatus

1995-02-08

1996-05-21

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20429836, 216 66, C23C 1446, B23K 1500

Patent

active

055185959

ABSTRACT:
An apparatus for effecting micro fabrication of wafer surfaces by emitting a focused ion beam thereto, in which a gas is jetted through a gas introducing pipe to an ion emitter whereby the gas is adsorbed to an emitter surface. A potential difference is applied between the emitter and an extraction electrode to extract ions. The ions are then accelerated and focused into a focused ion beam having an etching function. The focused ion beam is deflected by a deflecting electrode to form a predetermined pattern. The focused ion beam is decelerated by action of a decelerating electrode prior to impingement on a wafer under treatment. Consequently, a wafer surface is etched to define the predetermined pattern without damage to the wafer surface.

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Chemically enhanced focused ion beam etching of deep groves and laser-mirror facets in GaAs under CI.sub.2 gas irradiation using a fine nozzle, Appl. Phys. Lett. 50 (26), 29 Jun. 1987.

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