Ferroelectric memory with ferroelectric thin film having thickne

Details Ferroelectric memory with ferroelectric thin film having thickne Ferroelectric memory with ferroelectric thin film having thickne

1999-01-11

2000-08-15

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 15, 257 20, 257 22, H01L 2976, H01L 2994, H01L 31062, H01L 31113, H01L 31119

Patent

active

061040495

ABSTRACT:
A coating of liquid precursor containing a metal is applied to a first electrode, baked on a hot plate in oxygen ambient at a temperature not exceeding 300.degree. C. for five minutes, then RTP annealed at 675.degree. C. for 30 seconds. The coating is then annealed in oxygen or nitrogen ambient at 700.degree. C. for one hour to form a thin film of layered superlattice material with a thickness not exceeding 90 nm. A second electrode is applied to form a capacitor, and a post-anneal is performed in oxygen or nitrogen ambient at a temperature not exceeding 700.degree. C. If the material is strontium bismuth tantalate, the precursor contains u mole-equivalents of strontium, v mole-equivalents of bismuth, and w mole-equivalents of tantalum, where 0.8.ltoreq.u.ltoreq.1.0, 2.0.ltoreq.v.ltoreq.2.3, and 1.9.ltoreq.w.ltoreq.2.1.

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