Method of isolating a SRAM cell

Details Method of isolating a SRAM cell Method of isolating a SRAM cell

1997-10-30

2000-08-15

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438213, 438225, 438294, 438297, 438439, 438453, H01L 2176, H01L 21762

Patent

active

061035793

ABSTRACT:
A static random access memory cell comprising a first invertor including a first p-channel pullup transistor, and a first n-channel pulldown transistor in series with the first p-channel pullup transistor; a second invertor including a second p-channel pullup transistor, and a second n-channel pulldown transistor in series with the second n-channel pullup transistor, the first invertor being cross-coupled with the second invertor, the first and second pullup transistors sharing a common active area; a first access transistor having an active terminal connected to the first invertor; a second access transistor having an active terminal connected to the second invertor; and an isolator isolating the first pullup transistor from the second pullup transistor.

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patent: 5896336 (1999-04-01), McClure

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