Plasma formation using electron cyclotron resonance and method f

Details Plasma formation using electron cyclotron resonance and method f Plasma formation using electron cyclotron resonance and method f

1993-02-03

1994-11-22

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 118723MW, 118723MA, 118723MR, 427526, H01L 2100

Patent

active

053665864

ABSTRACT:
In the ECR plasma generating method, the microwave introduced into the plasma formation chamber is oscillated at frequencies in the range of a predetermined bandwidth, and the magnetic field applied to the introduced microwave has the flux densities in the range corresponding to the frequency bandwidth so as to meet the ECR condition, resulting a high density ECR plasma. The frequency bandwidth is at least +-4% of the center frequency of 2.45 GHz. The gradient of the magnetic field at the ECR area is at most 10 Gauss/cm. When a substrate is processed by the plasma generated by using the ECR, the ECR area is formed at a position at least 5 cms away from the microwave introducing window.

REFERENCES:
patent: 4876983 (1989-10-01), Fukuda et al.
patent: 5013401 (1991-05-01), Samukawa et al.

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