Method of forming an MOS-type integrated circuit structure with

Details Method of forming an MOS-type integrated circuit structure with Method of forming an MOS-type integrated circuit structure with

1995-06-06

1997-08-26

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

H01L 2170

Patent

active

056610696

ABSTRACT:
An improved MOS-type integrated circuit structure, and a method of making same, are described wherein a diode is electrically connected between the polysilicon gate electrode and the semiconductor substrate, and physically located in the substrate below the contact area of the polysilicon gate electrode so that no extra lateral space is needed to provide such a diode connection between the polysilicon gate electrode and the substrate. The junction is formed in the substrate in a region where the contact area of the gate electrode is usually positioned over field oxide. An opening is provided for the diode in the field oxide region of the substrate, by masking off an additional portion of the substrate, when the field oxide is initially grown, to provide for location of the diode therein.

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