Non-volatile semiconductor memory device and method of manufactu

Details Non-volatile semiconductor memory device and method of manufactu Non-volatile semiconductor memory device and method of manufactu

1995-09-25

1997-08-26

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438591, 438954, H01L 218247

Patent

active

056610564

ABSTRACT:
A tunnel oxide film is formed on the surface of a p-type silicon substrate, and a floating gate electrode made from a polysilicon film is formed on the surface of the tunnel oxide film. On the surface of the floating gate electrode, a control gate electrode is formed via an NON film formed by sequentially stacking a silicon nitride film, a silicon oxide film, and a silicon nitride film. A side oxide film is formed on the side surfaces of the floating gate electrode and the control gate electrode. Source and drain regions made from an n-type diffused layer are formed on the surfaces of element regions of the silicon substrate on the two sides of the floating gate electrodes.

REFERENCES:
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patent: 5445981 (1995-08-01), Lee
patent: 5460992 (1995-10-01), Hasegawa
patent: 5470771 (1995-11-01), Fujii et al.
C. S. Lai et al., "The Electrical characteristics of Polysilicon Oxide Grown in Pure N.sub.2 O", IEEE Electron Device Letters, vol. 16, No. 9, Sep. 1995.
S. Chiang et al; "Antifuse Structure Comparison for Field Programmable Gate Arrays", IEDM 92, pp. 611-614, 1992, month unknown.
Y. Okada et al., "Furnace Grown Gate Oxcynitride Using Nitric Oxide (NO)", IEEE Transactions on Electron Devices, vol. 41, No. 9, Sep. 1994.
S. Mori et al., "Bottom-Oxide Scaling for Thin Nitride/Oxide Interpoly Dielectric in Stacked-Gate Nonvolatile Memory Cells", IEEE Transactions on Electron Devices, vol. 39, No. 2., Feb. 1992.

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