Mosfet with buried contact and air-gap gate structure

Details Mosfet with buried contact and air-gap gate structure Mosfet with buried contact and air-gap gate structure

1999-07-06

2000-10-03

Clark, Sheila V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257411, 257386, 257900, 438287, H01L 2976

Patent

active

061277126

ABSTRACT:
A MOSFET with buried contacts and air-gap gate structure is disclosed. The MOSFET comprises trench isolation regions on a silicon substrate. A poly gate on the active region is formed of a gate dielectric layer and a polysilicon layer, wherein the polysilicon layer is in the midst of a portion of the gate dielectric layer so that there are two unoccupied gate dielectric regions at two sides of polysilicon layer. A first buried contact and second buried contacts are doped polysilicon layer being with respective vertical portions back to back adjacent two terminals of the gate dielectric layer and with respect horizontal portions extended to the trench isolation regions. A CVD oxide layer is formed atop the first buried contact, the poly gate, and the second buried contact to form the air gaps therein. The source/drain regions are underneath the first and second buried contacts, respectively. Furthermore, the extended source/drain regions are extended from the source/drain regions to regions underneath unoccupied gate dielectric regions.

REFERENCES:
patent: 5389557 (1995-02-01), Jung-Suk
patent: 5770507 (1998-06-01), Chen et al.

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