Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1998-05-22

2000-10-24

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257621, 257768, 257770, H01L 29788

Patent

active

061371343

ABSTRACT:
A semiconductor memory device includes a floating gate, a control gate, source and drain regions, a lightly doped region of the second conductivity type, and a silicide layer. The floating gate is formed on a semiconductor substrate of the first conductivity type via a gate insulating film. The control gate is formed on the floating gate via an insulating film. The source and drain regions are formed by diffusing an impurity of the second conductivity type in the surface of the semiconductor substrate on the two sides of the floating gate. The lightly doped region is formed with a surface exposed at a position distant from the floating gate in at least the source region. The lightly doped region has an impurity dose lower than that of the source region. The silicide layer is formed on the exposed surface of the lightly doped region.

REFERENCES:
patent: 5789802 (1998-08-01), Tripsas
patent: 5894162 (1999-04-01), Paterson et al.

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