Method of forming three-dimensional flash memory structure

Details Method of forming three-dimensional flash memory structure Method of forming three-dimensional flash memory structure

1999-10-21

2000-10-24

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438266, H01L 21336

Patent

active

061366501

ABSTRACT:
A three-dimensional flash array structure and the fabrication method thereof. The three-dimensional flash memory array structure disclosed in the invention can be expanded volumetrically, so that a memory cell with large capacity can be manufactured in a unit area to increase the memory capacity.

REFERENCES:
patent: 5874760 (1999-02-01), Burns, Jr. et al.
patent: 5962890 (1999-10-01), Sato
patent: 5966602 (1999-02-01), Kawazu et al.

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