Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-08-11
2000-10-03
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438636, 438631, 438645, H01L 214763
Patent
active
061272590
ABSTRACT:
An anti-reflective coating layer which is used to provide better control over the photolithographic process during the contact masking step is removed using a boiling phosphoric acid bath to reduce the amount of thickness variations that remain after the metal contact is filled in the contact hole and planarized by polishing. As a result, post-polish defect inspections are facilitated.
REFERENCES:
patent: 5710067 (1998-01-01), Foote et al.
patent: 5759893 (1998-06-01), Wu
Rangarajan Bharath
Shields Jeffrey A.
Advanced Micro Devices , Inc.
Bowers Charles
Lee Hsien Ming
LandOfFree
Phosphoric acid process for removal of contact BARC layer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Phosphoric acid process for removal of contact BARC layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phosphoric acid process for removal of contact BARC layer will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-194892