Phosphoric acid process for removal of contact BARC layer

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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438636, 438631, 438645, H01L 214763

Patent

active

061272590

ABSTRACT:
An anti-reflective coating layer which is used to provide better control over the photolithographic process during the contact masking step is removed using a boiling phosphoric acid bath to reduce the amount of thickness variations that remain after the metal contact is filled in the contact hole and planarized by polishing. As a result, post-polish defect inspections are facilitated.

REFERENCES:
patent: 5710067 (1998-01-01), Foote et al.
patent: 5759893 (1998-06-01), Wu

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