Method of fabrication LDD semiconductor device with amorphous re

Details Method of fabrication LDD semiconductor device with amorphous re Method of fabrication LDD semiconductor device with amorphous re

1994-02-03

1999-02-09

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438528, H01L 21336

Patent

active

058693777

ABSTRACT:
A method of fabricating a MOS field effect semiconductor device having an LDD structure is described in which an insulating film is formed on a gate electrode and a layer of polycrystalline silicon, oxide, high melting point metal or a silicide of a high melting point metal is formed on a wafer and etched away by anisotropic RIE, except a portion thereof on a sidewall of the gate. With the resulting structure, degradation of the transconductance of the device due to injection of hot carriers is prevented. Also, the size of the device can be minimized without unduly increasing the resistances of the drain/source region, the gate electrode, and the contacts of the device.

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