Non-self-aligned side channel implants for flash memory cells

Details Non-self-aligned side channel implants for flash memory cells Non-self-aligned side channel implants for flash memory cells

1997-12-16

2000-10-03

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438264, 438286, H01L 21336

Patent

active

061272221

ABSTRACT:
A system and method for providing a flash memory cell on a semiconductor substrate are disclosed. The system and method include providing a side implant and providing an implant in at least one of a drain or a source of the flash memory cell.

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