Process for drawing patterns with extremely fine features in the

Details Process for drawing patterns with extremely fine features in the Process for drawing patterns with extremely fine features in the

1983-01-20

1984-08-21

Kittle, John E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430396, 430966, 430967, 430273, 430322, 427 431, G03C 516

Patent

active

044670265

ABSTRACT:
In the patterning process in the fabrication of VLSI, LSI and IC systems, the electron beam is used to write a pattern over a resist layer on a wafer, but the resist layer is exposed by X-rays. More particularly, a finely focused beam of electrons writes a pattern on a thin metal film formed over a resin layer which in turn is formed over a wafer and the secondary X-rays; that is, the characteristics X-rays (such as K.alpha.) emitted from the thin metal film when the electron beam strikes it, expose the resist layer which is sensitive to the X-rays, whereby a high degree of resolution can be obtained.

REFERENCES:
patent: 4018938 (1977-04-01), Feder et al.
patent: 4267259 (1981-05-01), Bohlen et al.
patent: 4301237 (1981-11-01), Burns
Zacharias, Conference: 1981 Proceedings of 4th Biennial University/Government/Industry Microelectrons Symposium, Starville, MS, U.S.A. (May 26-28, 1981), pp. II/10-420.
Lepsetter, M. P., Conference: International Electron Devices Meeting, Technical Digest, Washington, DC (Dec. 8-10, 1980), pp. 42-44.

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