Method for preparing a shield to reduce particles in a physical

Details Method for preparing a shield to reduce particles in a physical Method for preparing a shield to reduce particles in a physical

1992-08-11

1995-02-21

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

156643, 20419235, 20429811, 134 1, 451 38, C23C 1434, B44C 122, B24B 100

Patent

active

053912756

ABSTRACT:
In a method for preparing a shield and/or clamping ring prior to use in a physical vapor deposition process, the shield and/or clamping ring is first bead blasted using an abrasive powder, then is treated in an ultrasonic cleaning chamber to remove loose particles and then sputter etched or treated with a plasma. The sputtering or plasma treatment serves to loosen contamination which may form a diffusion barrier and prevent the deposits from bonding to the shield and also serves to roughen the surface of the shield and/or clamping ring, to reduce interface voids and improve adhesion of sputtered material onto the shield and/or clamping ring. The process of the invention results in improved cleaning of the shield and/or clamping ring and improved adhesion of sputtered material thereon, thereby increasing the time before the shield/clamping ring must be cleaned and reducing down-time of the physical vapor deposition chamber.

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Vossen et al., "Thin Film Film Processes", Academic Press, 1978, pp. 41-45 and pp. 253-255.
European Search Report, Patent Application 91102324.0, Jul. 17, 1991.

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