Method for the deposition of pure semiconductor material

Details Method for the deposition of pure semiconductor material Method for the deposition of pure semiconductor material

1980-03-03

1982-01-19

Clements, Gregory N.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG64, 423349, 427 86, 427 95, C30B 2508, C30B 2514

Patent

active

043115454

ABSTRACT:
The invention relates to a method and device for making pure semiconductor aterial by thermal decomposition of compounds of the semiconductor material on suitable carrier elements. The quantity and quality of the obtained semiconductor material is increased in accordance with the invention by introducing the compounds to be decomposed into the reactor chamber in at least a partially liquid state through a nozzle having a plurality of discharge openings.

REFERENCES:
patent: 3057690 (1962-10-01), Reuschel et al.
patent: 3058812 (1962-10-01), Chu et al.
patent: 3147141 (1964-09-01), Ishizuka
patent: 3508962 (1970-04-01), Manasevit et al.
patent: 4150168 (1979-04-01), Yatsurugi et al.
patent: 4173944 (1979-11-01), Koppl et al.

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