Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Patent
1997-09-16
2000-05-30
Mulpuri, Savitri
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
H01L 21265
Patent
active
060690623
ABSTRACT:
A method for forming a shallow junction in a semiconductor wafer includes the steps of implanting a dopant material, such as boron, into the wafer, selecting a fluorine dose and energy corresponding to the dopant material implant to produce a desired junction depth less than 1000 angstroms and a desired sheet resistance, and implanting fluorine into the semiconductor wafer at the selected dose and energy. The dopant material is activated by thermal processing of the semiconductor wafer at a selected temperature for a selected time to form the shallow junction. Residual fluorine and wafer damage may be removed by low temperature annealing following the step of activating the dopant material.
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Mulpuri Savitri
Varian Semiconductor Equipment Associates Inc.
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