Method of manufacturing a semiconductor integrated circuit devic

Details Method of manufacturing a semiconductor integrated circuit devic Method of manufacturing a semiconductor integrated circuit devic

1999-09-10

2000-05-30

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438235, 438396, 438238, 438258, 390390, 390393, H01L 218242, H01L 218244

Patent

active

060690380

ABSTRACT:
A silicon nitride film is left behind on only regions for forming the gate electrodes (word lines) of memory-cell selecting MISFETs constituting a DRAM, and it is not left behind on either of the gate electrodes of MISFETs constituting a logic LSI and those of MISFETs constituting the memory cells of an SRAM. Thereafter, the gate electrodes (word lines) in the DRAM and the gate electrodes in the logic LSI and the SRAM are simultaneously patterned by etching which employs the silicon nitride film and a photoresist film as a mask. Thus, in the manufacture of a semiconductor integrated circuit device wherein both the DRAM and the logic LSI are mounted, a contact hole forming process (gate-SAC) for the DRAM is made compatible with a contact hole forming process (L-SAC).

REFERENCES:
patent: 5792696 (1998-08-01), Kim et al.
patent: 6004841 (1999-12-01), Chang et al.
patent: 6008084 (1998-08-01), Sung

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