Semiconductor device having an nitrogen-rich punchthrough region

Details Semiconductor device having an nitrogen-rich punchthrough region Semiconductor device having an nitrogen-rich punchthrough region

1997-12-18

2000-02-15

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438528, H01L 21336

Patent

active

060252383

ABSTRACT:
A semiconductor device having an nitrogen-rich punchthrough region under the channel region, and a process for fabricating such a device are disclosed. In accordance with one embodiment, a semiconductor device is formed by forming an nitrogen-rich punchthrough region in a substrate, and forming a channel region over the nitrogen-rich punchthrough region. The use of an nitrogen-rich punchthrough region may, for example, inhibit the diffusion of dopants used in forming the channel region.

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