Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1999-05-20

2000-02-15

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438138, 438105, 438285, 438589, 438931, H01L 21336, H01L 2100

Patent

active

060252332

ABSTRACT:
A vertical type semiconductor device having a semiconductor substrate and at least one gate electrode structure formed in the semiconductor substrate for controlling a current flow across the semiconductor substrate. The semiconductor substrate is formed by a silicon substrate, a silicon carbide or diamond layer epitaxially deposited on the silicon substrate, and a silicon layer epitaxially deposited on the silicon carbide or diamond layer. Recesses are formed in the silicon layer and gate electrodes are provided in the recesses via silicon oxide films. Source or emitter regions are formed in portions of the silicon layer which are brought into contact with the silicon oxide films by inverting the conductivity of these portions. Source or emitter electrodes are provided on the source or emitter regions, and a drain or collector electrode is provided on a rear surface of the silicon substrate.

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