Etching of contact holes

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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430317, 216 18, G03F 726

Patent

active

060251166

ABSTRACT:
The photolithographic etching of contact holes in trenches in an insulator layer over a silicon body is improved by adjusting properly the depth of the trench and the thickness of the photoresist used in the photolithography.

REFERENCES:
patent: 4315984 (1982-02-01), Okazaki et al.
patent: 4758530 (1988-07-01), Schubert
patent: 5173442 (1992-12-01), Carey
patent: 5246817 (1993-09-01), Shipley, Jr.
patent: 5260152 (1993-11-01), Shimizu et al.
patent: 5320932 (1994-06-01), Haraguchi et al.
patent: 5358827 (1994-10-01), Garofalo et al.
patent: 5465859 (1995-11-01), Chapple-Sokol et al.
patent: 5484672 (1996-01-01), Bajuk et al.
patent: 5635423 (1997-06-01), Huang et al.
patent: 5679608 (1997-10-01), Cheung et al.
patent: 5686354 (1997-11-01), Avanzino et al.
patent: 5741626 (1998-04-01), Jain et al.

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