Static information storage and retrieval – Read/write circuit – Precharge
Patent
1995-03-14
1996-05-14
Nelms, David C.
Static information storage and retrieval
Read/write circuit
Precharge
36518911, 365190, 365204, G11C 700
Patent
active
055174523
ABSTRACT:
A discharging circuit for bit lines for compensating for the effect of subthreshold leakage in pull-up transistors. The bit lines are periodically discharged to a level approximately equal to the level that the bit lines would be at if no leakage occurred. In this way, the discharging can occur even during an active memory cycle. The discharging occurs infrequently, for example, once every 512 memory cycles.
REFERENCES:
patent: 4905197 (1990-02-01), Urai
patent: 5200924 (1993-04-01), Wong
patent: 5412606 (1995-05-01), Lee
patent: 5416742 (1995-05-01), Takada
Dinh Son
Intel Corporation
Nelms David C.
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