Construction of a chamber casing in a plasma etching system

Details Construction of a chamber casing in a plasma etching system Construction of a chamber casing in a plasma etching system

1997-01-02

1998-02-24

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118723I, 31511151, 216 68, H01L 21302

Patent

active

057208468

ABSTRACT:
A plasma etching system is disclosed that minimizes energy loss due to the dissipation of plasma, maintaining high plasma density, and thus increasing ionization efficiency. By this construction, wafers may be etched under low pressure, which reduces the chance of impact applied to the wafers and increases the productivity of the etching system. The construction has a chamber casing having a plasma chamber into which plasma for etching wafers is injected, a reflective film coated on the outer surface of the chamber casing, the reflection film acting to insulate the plasma chamber and prevent the plasma from leaking out of the plasma chamber, and a coil wound around the chamber casing over the reflective film. A predetermined voltage is applied to the coil to generate plasma in the plasma chamber.

REFERENCES:
patent: 4431901 (1984-02-01), Hull
patent: 5521351 (1996-05-01), Mahoney
patent: 5540800 (1996-07-01), Qian

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