Corrosion-free aluminum etching process for fabricating an integ

Details Corrosion-free aluminum etching process for fabricating an integ Corrosion-free aluminum etching process for fabricating an integ

1991-05-03

1992-06-30

Simmons, David A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, H01L 2100

Patent

active

051260085

ABSTRACT:
A process is described for plasma-assisted etching of an aluminum layer to form aluminum lines while fabricating an integrated circuit structure on a semiconductor wafer using one or more bromine-containing etch gases, and optionally SF.sub.6 in combination with the bromine-containing gas or gases, which will not result in the formation of corrosive residues such as normally occurs when chlorine-based etchants are used.

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