Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-05-21
1998-06-30
Trinh, Michael
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438291, 438301, 438307, H01L 21336
Patent
active
057733481
ABSTRACT:
A method of fabricating a short-channel MOS device on a substrate is provided. First, stacked pad oxide
itride layers are formed on the substrate. Then a patterned photoresist film is formed on the planned gate region which covers the gate region and its sidewall spacers. A LPD (Liquid Phase Deposition) oxide is selectively deposited on the pad nitride layer by a liquid phase deposition process, except on the pre-formed photoresist film. After removing the photoresist layer nitride spacers leaning against the LPD oxide layer are formed by lithography and etching. The width of the nitride spacers controls the channel length of the MOS device. After forming a gate structure laterally sandwiched by the nitride spacers on the exposed substrate, a two-stage salicide process, which can form shallow junctions and self-aligned contacts on the source and the drain, is performed to complete the MOS device.
REFERENCES:
patent: 5429956 (1995-07-01), Shell et al.
patent: 5434093 (1995-07-01), Chau et al.
patent: 5489543 (1996-02-01), Hong
patent: 5534447 (1996-07-01), Hong
patent: 5538913 (1996-07-01), Hong
Tanaka et al; "A Sub-0.1 .mu.m Grooved Gate MOSFET with High Immunity to Short Channel Effects", IEDM, pp. 537-540, 1993.
"A 0.1 .mu.m Inverted-Sidewall Recessed-Channel (ISRC) nMOSFET for High Performance and Reliability" J. Lyu et al., in the IEDM Tech. Dig., pp. 431-434, 1995.
Powerchip Semiconductor Corp.
Trinh Michael
LandOfFree
Method of fabricating a short-channel MOS device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating a short-channel MOS device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a short-channel MOS device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1858610