Method of making diffused layer resistors for semiconductor devi

Details Method of making diffused layer resistors for semiconductor devi Method of making diffused layer resistors for semiconductor devi

1995-09-26

1998-06-30

Quach, T. N.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438238, 438383, 438682, H01L 218238, H01L 21266

Patent

active

057733392

ABSTRACT:
A low-concentration diffused region is created on a region of a semiconductor substrate reserved for the creation of a diffused-region resistor, and after a mask creation film has been created on the surface of the semiconductor substrate, a doping mask is created to cover part of the region reserved for the creation of a diffused-region resistor. Subsequently, a high-concentration diffused layer is created on the region reserved for the creation of a diffused-region resistor except the part covered by the doping mask by using an impurity doping technique. Then, after a silicide creating mask has been created from the mask creation film by means of an etching technique using the doping mask as an etching mask, the doping mask is removed. Later on, a silicide layer is created selectively on the high-concentration diffused layer. In addition, this method can be applied also to a method of creating a diffused layer in a CMOS process.

REFERENCES:
patent: 4316319 (1982-02-01), Anantha et al.
patent: 4551907 (1985-11-01), Mukai
patent: 4609568 (1986-09-01), Koh et al.
patent: 4643777 (1987-02-01), Meada
patent: 5126279 (1992-06-01), Roberts
patent: 5134088 (1992-07-01), Zetterlund
patent: 5356826 (1994-10-01), Natsume
patent: 5405806 (1995-04-01), Pfeister et al.

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