Method and apparatus for cleaning a target in a sputtering sourc

Details Method and apparatus for cleaning a target in a sputtering sourc Method and apparatus for cleaning a target in a sputtering sourc

1995-07-24

1998-06-30

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20429808, 20429811, 20429819, 20429825, C23C 1434

Patent

active

057728585

ABSTRACT:
A magnetron sputtering process and apparatus for cleaning a target, thereby eliminating back sputtered particles from the target surface and effecting uniform erosion of the target is provided. A deposition chamber comprises a magnetron assembly, a shutter mechanism, D.C. and R.F. power sources, and means for alternatively switching the power sources for sputter deposition and target cleaning. As an example, application of D.C. power sputters target material in regions located between the poles of the magnets of the magnetron assembly. At selected intervals during which a processed substrate is removed from the chamber, R.F. power is then applied to the chamber to establish a plasma which sputters the target in lesser eroded regions and removes previously deposited back sputtered particles thereon.

REFERENCES:
patent: 3775285 (1973-11-01), Lane
patent: 3985635 (1976-10-01), Adam et al.
patent: 4410407 (1983-10-01), Macaulay
patent: 5114556 (1992-05-01), Lamont, Jr.
patent: 5223112 (1993-06-01), Tepman
patent: 5314597 (1994-05-01), Harra
patent: 5320728 (1994-06-01), Tepman
Vossen et al., "Thin Film Process", pp. 41-42, Academic Press, 1978.

Affiliated with

Also associated with

Rating

Method and apparatus for cleaning a target in a sputtering sourc does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for cleaning a target in a sputtering sourc, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for cleaning a target in a sputtering sourc will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1855408