Method for fabricating a storage electrode without polysilicon b

Details Method for fabricating a storage electrode without polysilicon b Method for fabricating a storage electrode without polysilicon b

1997-01-30

1998-05-19

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438256, 438396, H01L 218242

Patent

active

057535523

ABSTRACT:
A method for fabricating a storage electrode is designed to avoid the problems of polysilicon bridge and undercut. First, a substrate having a transistor is provided. An insulating layer is then deposited over the substrate. A contact hole is then formed in the insulating layer down to the source/drain region of the transistor. A thin polysilicon layer is then deposited and further patterned at least at the periphery of the contact hole and on the upper surface of the source/drain region. Finally, an anisotropical epitaxial polysilicon layer is formed on the upper surface of the first polysilicon layer.

REFERENCES:
patent: 5312769 (1994-05-01), Matsuo et al.
patent: 5385863 (1995-01-01), Tatsumi et al.
patent: 5591664 (1997-01-01), Wang et al.
patent: 5618747 (1997-04-01), Lou
S. Wolf and R.N. Tauber, "Silicon Processing for the VLSI Era vol. 1--Process Technology," Lattic Press, 1986, pp. 166-167.

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