Method of forming ultra-thin and conformal diffusion barriers en

Details Method of forming ultra-thin and conformal diffusion barriers en Method of forming ultra-thin and conformal diffusion barriers en

1997-03-19

2000-06-20

Thomas, Tom

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438644, 438645, 438648, 438687, 257751, 257752, 257753, 257762, 257763, 257767, H01L 21283, H01L 21285, H01L 213205, H01L 21441

Patent

active

060777745

ABSTRACT:
A method is provided for forming thin diffusion barriers in a semiconductor device (10). In one embodiment of the invention, a metal precursor gas is introduced to a surface of a dielectric layer. A predetermined amount of heat is then applied to the metal precursor gas and the dielectric layer. The heat causes the metal precursor gas to react with the dielectric layer, thereby forming a uniform, relatively thin diffusion barrier on the surface of the dielectric layer. In another embodiment of the invention, a metal precursor gas is introduced to a surface of a metal conductor. A predetermined amount of heat can then be applied to the metal precursor gas and the metal conductor, which creates a reaction between the gas and the conductor, and thereby produces a thin diffusion barrier on the surface of the metal conductor.

REFERENCES:
patent: 4884123 (1989-11-01), Dixit et al.
patent: 5308793 (1994-05-01), Taguchi et al.
patent: 5354712 (1994-10-01), Ho et al.
patent: 5430328 (1995-07-01), Hsue
patent: 5492725 (1996-02-01), Gordon
patent: 5502334 (1996-03-01), Shinohara

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