Multiple exposure masking system for forming multi-level resist

Details Multiple exposure masking system for forming multi-level resist Multiple exposure masking system for forming multi-level resist

1996-06-10

1998-05-19

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430 5, 430394, 430322, G03F 900

Patent

active

057534179

ABSTRACT:
A method is provided for forming multi-level profiles from a photoresist mask. The method includes exposing selected areas of a photoresist layer to two or more different patterns of light at different light dosage levels. For example, one pattern will be exposed to a relatively low dose of light, or to light for a short duration, and a second pattern will be exposed to a relatively high dose of light, or for a greater duration. The plurality of different exposures at different dosage levels occur prior to developing the photoresist. When the photoresist layer is developed, the pattern exposed to a lower dose of light will be etched substantially more slowly than the areas of the photoresist exposed to higher dose of light. By controlling the development process to completely remove the resist in the areas exposed to a high dose of light and only partially remove the resist in the areas exposed to a lower dose of light, a multi-level photoresist profile is formed. Such a multi-level profile can then be used in subsequent semiconductor processing, for example, the formation of interconnects and vias.

REFERENCES:
patent: 5237393 (1993-08-01), Tominaga
patent: 5244759 (1993-09-01), Pierrat
patent: 5308721 (1994-05-01), Garofalo et al.
patent: 5384218 (1995-01-01), Tokui et al.
patent: 5439764 (1995-08-01), Alter et al.
Article entitled, "Phase Masks and Grey-Tone Masks", by Pierre Sixt, Litomask by SCEM, Neuchatel, Switzerland, printed in Semiconductor Fabtech, Issue No. 23/1995, pp. 209-213.

Affiliated with

Also associated with

Rating

Multiple exposure masking system for forming multi-level resist does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multiple exposure masking system for forming multi-level resist , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multiple exposure masking system for forming multi-level resist will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1851593