Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-10-27
2000-06-20
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438306, H01L 21336
Patent
active
060777508
ABSTRACT:
The present invention relates to forming epitaxial Co self-align silicide for a semiconductor device. An epitaxial Co self-align suicide layer for a semiconductor device is formed by forming a buffer layer on a silicon substrate, depositing cobalt thereon and applying an annealing process thereto to restrain silicon and cobalt from radically reacting on each other when applying the annealing process after depositing cobalt on the silicon substrate. The buffer layer is formed by performing a surface treatment using CHF.sub.3 or O.sub.2 onto the silicon substrate, applying an ion implantation using carbon, fluorine or oxygen to the silicon substrate, or exposing the silicon substrate to oxygen plasma. The present invention has an effect of forming shallow junction for a scaling down process to improve the integration of the semiconductor device.
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Byun Jeong Soo
Sohn Dong Kyun
LG Semicon Co. Ltd.
Lindsay Jr. Walter L.
Niebling John F.
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