Method of making dual channel gate oxide thickness for MOSFET tr

Details Method of making dual channel gate oxide thickness for MOSFET tr Method of making dual channel gate oxide thickness for MOSFET tr

1998-03-03

2000-06-20

Fahmy, Wael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438275, 438520, 438766, 438981, H01L 21336

Patent

active

060777494

ABSTRACT:
A semiconductor device having gate oxide with a first thickness and a second thickness is formed by initially implanting a portion of the gate area of the semiconductor substrate with nitrogen ions and then forming a gate oxide on the gate area. The oxide having the greater thickness is formed adjacent a source or drain region of the device, and the oxide with the lesser thickness is formed adjacent the other one of the source or drain regions. Preferably the gate oxide is grown by exposing the gate area to an environment of oxygen. A nitrogen implant inhibits the rate of SiO.sub.2 growth in an oxygen environment. Therefore, the portion of the gate area with implanted nitrogen atoms will grow or form a layer of gate oxide, such as SiO.sub.2, which is thinner than the portion of the gate area less heavily implanted or not implanted with nitrogen atoms. The gate oxide layer could be deposited rather than growing the gate oxide layer. After forming the gate oxide layer, polysilicon is deposited onto the gate oxide. The semiconductor substrate can then be implanted to form doped drain and source regions. Spacers can then be placed over the drain and source regions and adjacent the ends of the sidewalls of the gate.

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