Methods for manufacturing DRAM capacitors

Details Methods for manufacturing DRAM capacitors Methods for manufacturing DRAM capacitors

1997-12-02

2000-06-20

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438386, H01L 218242

Patent

active

060777397

ABSTRACT:
According to the manufacturing method for capacitors, which characterizes in using trench technique that is usually used in DRAM processes to form multiple bottom electrodes of the capacitor in a trench's sidewall, then increase the whole surface of the capacitor and enhance the charge stored in the electrodes. The capacitance of the capacitor manufactured by this invention is double that manufactured by conventional methods. In addition, the structure of the capacitor manufactured by this invention is multiple stages; therefor the depth of trenches is less than that manufactured by conventional methods. This manufacturing method according to the invention improves many difficulties existing in conventional processes.

REFERENCES:
patent: 5571743 (1996-11-01), Henkels et al.

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