Semiconductor device and method for producing the same

Details Semiconductor device and method for producing the same Semiconductor device and method for producing the same

1997-09-04

2000-05-23

Dang, Trung

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438227, 438232, 438527, 438529, H01L 218238

Patent

active

06066522&

ABSTRACT:
A semiconductor device include: a substrate of a conductivity type; a first well provided in the substrate and of the same conductivity type as the conductivity type of the substrate; a second well provided in the substrate and of an opposite conductivity type to the conductivity type of the substrate; and a buried well provided at a deep position in the substrate and of the opposite conductivity type to the conductivity type of the substrate. A buried well of the same conductivity type as the conductivity type of the substrate is further provided so as to be in contact with at least a part of a bottom portion of the first well so that the first well is at least partially electrically connected to the substrate.

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patent: 5622885 (1997-04-01), Merrill et al.
patent: 5759883 (1998-06-01), Kinoshita
International Search Report dated Jan. 21, 1998.
T. Morooka et al., "64MBIT DRAM", Mitsubishi Denki Giho, vol. 68, No. 3, pp. 209-212 (1994) with Partial English translation.

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