Semiconductor device having an outgassed oxide layer and fabrica

Details Semiconductor device having an outgassed oxide layer and fabrica Semiconductor device having an outgassed oxide layer and fabrica

1998-04-16

2000-05-23

Crane, Sara

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438778, 438787, H01L 21336, H01L 218234

Patent

active

06066519&

ABSTRACT:
A semiconductor device having an oxide layer formed by outgassing oxide from a showerhead and an apparatus and process for fabricating such a device is provided. A process for fabricating a semiconductor device, in accordance with one embodiment of the invention, includes placing a substrate in a chamber having an oxide source showerhead and outgassing oxide from the showerhead to form an oxide layer on the substrate. The oxide layer may be used, at least in part, as a gate dielectric for a transistor device and may have a thickness as thin as one or two molecules. The oxide source showerhead may, for example, be formed from a block of quartz, thereby providing a silicon oxide layer on the substrate.

REFERENCES:
patent: 4305725 (1981-12-01), Gubitose et al.
patent: 5863843 (1999-01-01), Green et al.

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