Semiconductor memory device provided with capacitors formed abov

Details Semiconductor memory device provided with capacitors formed abov Semiconductor memory device provided with capacitors formed abov

1995-05-12

1997-11-04

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257307, 257308, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

056843160

ABSTRACT:
A semiconductor memory device provided with capacitors formed above and below a cell transistor includes first and second transistors formed in a first level, a first storage electrode connected to the first transistor and formed below the first level, and a second storage electrode connected to the second transistor and formed above the first level. The first and second storage electrodes are connected to each source via a spacer formed on the sidewalls of each source, and undercuts are formed between the storage electrode and the transistor, to thereby obtain double or more cell capacitance, a stable cell transistor characteristic and reduced short-channel effects.

REFERENCES:
patent: 4860071 (1989-08-01), Sunami et al.
patent: 5089869 (1992-02-01), Matsuo et al.
patent: 5123765 (1992-06-01), Kim et al.
patent: 5559350 (1996-09-01), Ozaki et al.
IBM Technical Disclosure Bulletin, vol. 34, No. 7B, Dec. 1991, pp. 472-476 Dec. 1991.

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