Plasma reactor with programmable reactant gas distribution

Details Plasma reactor with programmable reactant gas distribution Plasma reactor with programmable reactant gas distribution

1995-06-07

1997-11-04

Niebling, John

Coating apparatus

Gas or vapor deposition

With treating means

118723ER, C23C 1600

Patent

active

056835175

ABSTRACT:
A plasma reactor for processing a semiconductor wafer inside a vacuum chamber has an array of gas distribution orifices in said chamber facing respective underlying portions of a top surface of said wafer, a gas flow supply, apparatus for individually coupling gas to respective ones of said gas distribution orifices from said gas flow supply at respective individual gas flow rates whereby respective gas flow rates over said respective underlying portions of said top surface of said wafer are respectively determined and apparatus for igniting a plasma inside said chamber from gases contained therein for processing said wafer.

REFERENCES:
patent: 5500256 (1996-03-01), Watabe
patent: 5522934 (1996-06-01), Suzuki et al.
patent: 5532190 (1996-07-01), Goodyear et al.

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