Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1998-04-14

1999-09-07

Brown, Peter Toby

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438372, 438375, 438235, 438309, H01L 218238

Patent

active

059500808

ABSTRACT:
In a semiconductor device manufacturing method, a buried collector region (5) of a bipolar transistor is formed, and then born is ion-implanted into at least the lower portion of a graft base region (15) to form a region (10) having a low donor concentration, whereby the capacitance between the collector and the base of the bipolar transistor can be reduced to achieve a high-speed operation of a circuit.

REFERENCES:
patent: 4151009 (1979-04-01), Ogureck et al.
patent: 4484388 (1984-11-01), Iwasaki
patent: 4855245 (1989-08-01), Neppl et al.
patent: 5001073 (1991-03-01), Huie
patent: 5071778 (1991-12-01), Solheim
patent: 5118633 (1992-06-01), Sagara et al.
patent: 5187109 (1993-02-01), Cook et al.
patent: 5470766 (1995-11-01), Lien
patent: 5698459 (1997-12-01), Grubisich et al.
patent: 5780329 (1998-07-01), Randazzo et al.
K. Ishimaru, et al, Bipolar Installed CMOS Technology without Any Process Step Increase for High Speed Cache SRAM,1995 IEEE, pp. 3,4,5,6, Japan.

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1814581